n-channel silicon gate devices

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• Channel length modulation — Cross section of a MOSFET operating in the saturation region One of several short channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for… …   Wikipedia

• Field-programmable gate array — FPGAs should not be confused with the flip chip pin grid array, a form of integrated circuit packaging. A field programmable gate array is a semiconductor device containing programmable logic components called logic blocks , and programmable… …   Wikipedia

• Dual-Gate-MOSFET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …   Deutsch Wikipedia

• Advanced Micro Devices — Infobox Company company name=Advanced Micro Devices, Inc. company logo= company type=Public (nyse|AMD) foundation=1969 founder=W. Jerry Sanders III Edwin J. Turney Additional co founders location city=Sunnyvale, California, US key people=Derrick… …   Wikipedia

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• semiconductor device — ▪ electronics Introduction       electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …   Universalium

• Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …   Wikipedia

• Multigate device — A multigate device or multiple gate field effect transistor(MuGFET) refers to a MOSFET which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces …   Wikipedia

• Depletion-load NMOS logic — Depletion load nMOS/NMOS (n channel metal oxide semiconductor) is a form of nMOS logic family which uses depletion mode n type MOSFETs as load transistors as a method to enable single voltage operation and achieve greater speed than possible with …   Wikipedia

• Depletion and enhancement modes — In field effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an ON state or an OFF state at zero gate–source voltage. Enhancement mode MOSFETs are the common …   Wikipedia

• Nanofluidic circuitry — is a nanotechnology aiming for control of fluids in nanometer scale. Due to the effect of an electrical double layer within the fluid channel, the behavior of nanofluid is observed to be significantly different compared with its microfluidic… …   Wikipedia